1st Edition
by Peter Capper (Editor), James Garland (Editor), Safa Kasap (Series Editor), Arthur Willoughby (Series Editor)
Mercury cadmium telluride (MCT) is the third most well-regarded semiconductor after silicon and gallium arsenide and is the material of choice for use in infrared sensing and imaging. The reason for this is that MCT can be ‘tuned’ to the desired IR wavelength by varying the cadmium concentration.
Mercury Cadmium Telluride: Growth, Properties and Applications
provides both an introduction for newcomers, and a comprehensive review
of this fascinating material. Part One discusses the history and
current status of both bulk and epitaxial growth techniques, Part Two is
concerned with the wide range of properties of MCT, and Part Three
covers the various device types that have been developed using MCT. Each
chapter opens with some historical background and theory before
presenting current research. Coverage includes:
- Bulk growth and properties of MCT and CdZnTe for MCT epitaxial growth
- Liquid phase epitaxy (LPE) growth
- Metal-organic vapour phase epitaxy (MOVPE)
- Molecular beam epitaxy (MBE)
- Alternative substrates
- Mechanical, thermal and optical properties of MCT
- Defects, diffusion, doping and annealing
- Dry device processing
- Photoconductive and photovoltaic detectors
- Avalanche photodiode detectors
- Room-temperature IR detectors
