by Balwinder Raj (Editor), Ashish Raman (Editor)
This
reference text discusses conduction mechanism, structure construction,
operation, performance evaluation and applications of nanoscale
semiconductor materials and devices in VLSI circuits design.
The
text explains nano materials, devices, analysis of its design
parameters to meet the sub-nano-regime challenges for CMOS devices. It
discusses important topics including memory design and testing, fin
field-effect transistor (FinFET), tunnel field-effect transistor (TFET)
for sensors design, carbon nanotube field-effect transistor (CNTFET) for
memory design, nanowire and nanoribbons, nano devices based
low-power-circuit design, and microelectromechanical systems (MEMS)
design.
The book
- discusses nanoscale semiconductor materials, device models, and circuit design
- covers nanoscale semiconductor device structures and modeling
- discusses novel nano-semiconductor devices such as FinFET, CNTFET, and Nanowire
- covers power dissipation and reduction techniques
Discussing
innovative nanoscale semiconductor device structures and modeling, this
text will be useful for graduate students, and academic researchers in
diverse areas such as electrical engineering, electronics and
communication engineering, nanoscience, and nanotechnology. It covers
nano devices based low-power-circuit design, nanoscale devices based
digital VLSI circuits, and novel devices based analog VLSI circuits
design.
